Cmos circuit and semiconductor device

ABSTRACT

A CMOS circuit and a semiconductor device having small leakage current and a low threshold voltage, and which is operated at high speed and with a small voltage amplitude, including an output stage circuit having MOSTs configured such that when their gates and sources are respectively set to an equal voltage, subthreshold leakage currents substantially flow between their drains and sources, and upon deactivation, a voltage is applied to the gate of each of the MOSTs to cause a reverse bias to be applied between the gate and source of the MOST. Upon activation of the circuit, the MOST is held in a reverse bias state or controlled to a forward bias state according to an input voltage.

TECHNICAL FIELD

The present invention relates to a low power circuit, and particularly to a CMOS circuit operable at high speed with a low voltage while suppressing a leakage current to be low.

BACKGROUND ART

Miniaturization of a CMOS circuit and MOS transistors (MOSTs) that configure it is essential to the realization of large scale integration (LSI). The CMOS circuit is important in particular. This is because a CMOS inverter comprising an n channel MOS transistor (Mn: hereinafter called nMOST) and a p channel MOS transistor (Mp: hereinafter called pMOST) both shown in FIG. 29, for example is ideal since either of the MOSTs is brought into conduction but the other thereof is cut off, in terms of both the absence of the flow of a dc penetration current and low power consumption. As examples of documents each having described the CMOS circuit, there are known a patent document 1 and a non-patent document 1.

-   [Patent Document 1] Japanese Unexamined Patent Publication No.     2002-319859 -   [Non-Patent Document 1] Y. Nakagome, M. Horiguchi, T. Kawahara, K.     Itoh, “Review and future prospects of low-voltage RAM circuits,”     IBM J. R & D, vol. 47, no. 5/6, pp. 525-552, September/November     2003.

DISCLOSURE OF THE INVENTION Problems that the Invention is to Solve

With the miniaturization of each MOST, however, such a CMOS circuit has also faced the following large problems. That is, when the MOST is micro-fabricated or scaled down, its withstand voltage is generally reduced. In order to maintain the reliability of the LSI, its operating voltage (V_(DD)) must therefore be lowered. Reducing V_(DD) is extremely effective even for a reduction in power consumption at activation of the LSI. This is because power for charging/discharging a load capacitance is proportional to V_(DD) ². A threshold voltage (V_(T)) of each MOST must however be reduced to maintain the speed even when V_(DD) is lowered. This is because a driving current of the MOST is approximately proportional to an effective gate voltage (V_(DD)−V_(T)) and hence the speed is approximately reversely proportional to the effective gate voltage. However, when V_(T) is reduced, a subthreshold leakage current (hereinafter called leakage current) of each MOST begins to increase exponentially (leakage current increases by one digit by simply reducing V_(T) by 0.1V). Since it flows through the CMOS circuit as a penetration current, the advantage of low power consumption of the CMOS circuit is lost. Accordingly, there is a lower limit to the possible value of V_(T) in terms of the leakage current. Although this lower limit value differs according to product specs, it is approximately 0.3V or so in a logical circuit. With its lower limit value, there is a lower limit even to the possible value of V_(DD). In order to achieve a practical speed under such a V_(T), the lower limit of this V_(DD) has heretofore been considered to be 0.6V or so. Thus, even if the miniaturization of each MOST is pursued, V_(DD) cannot be set to less than or equal to it in terms of the leakage current and the speed. Therefore, the reliability of the MOST is degraded with the miniaturization thereof. Although growing much larger in scale of LSI has been realized by reducing V_(DD) to cope with an increase in power consumption with the miniaturization of each MOST and its large scale, growing much large in the scale of LSI becomes difficult in terms of power consumption because V_(DD) cannot be lowered. It has recently been revealed gradually that variations in V_(T) in a chip increase with the miniaturization. It has therefore been pointed out that the lower limit of V_(DD) becomes high with the miniaturization. Degradation of the reliability of the MOST and the increase in power are becoming increasingly serious.

An object to be solved is to provide a CMOS circuit and a semiconductor device each of which is small in leakage current even though its threshold voltage V_(T) is low and which is operated at high speed and with a small voltage amplitude.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

Means for Solving the Problems

A summary of typical ones of the inventions disclosed in the present application will be explained in brief as follows: There is provided a dynamic CMOS circuit wherein upon its deactivation, a voltage is applied to the gate of, for example, a low-V_(T) MOST in such a manner that a reverse bias is applied between the gate and source of the MOST, thereby to reduce a leakage current and wherein upon its activation, the MOST is held in the reverse bias state or controlled to be a forward bias state according to an input voltage, and a load is driven at a low voltage commensurate with the low V_(T) of the MOST in the forward bias state.

More specifically, there is provided a CMOS circuit which includes such MOSTs that when their gates and sources are respectively set to an equal voltage, subthreshold leakage currents substantially flow between their drains and sources, wherein each of the MOSTs has a first operation mode and a second operation mode, wherein in the first operation mode, a constant voltage irrelevant to an input voltage of the circuit is applied to the gate of the MOST in such a manner that a reverse bias is applied between the gate and source of the MOST, and wherein in the second operation mode, the gate voltage is controlled in such a manner that the MOST is held in the reverse bias state or a forward bias is applied between the gate and source according to the input voltage of the circuit, or there is provided a semiconductor device equipped with the CMOS circuit. Alternatively, there is provided a CMOS circuit which includes such MOSTs that when their gates and sources are respectively set to an equal voltage, subthreshold leakage currents substantially flow between their drains and sources, wherein each of the MOSTs has a first operation mode and a second operation mode, wherein in the first operation mode, a constant voltage irrelevant to an input voltage of the circuit is applied to the gate of the MOST in such a manner that a forward bias is applied between the gate and source of the MOST, and wherein in the second operation mode, the gate voltage is controlled in such a manner that the MOST is held in the forward bias state or a reverse bias is applied between the gate and source according to the input voltage of the circuit or there is provided a semiconductor device equipped with the CMOS circuit.

Effects of the Invention

Since a leakage current that flows through each MOST at off by a reverse bias can be reduced, and a load can be driven at high speed even at a low operating voltage at on, low power consumption is enabled while maintaining high-speed performance.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is an explanatory diagram illustrating circuit symbols of MOSTs different in threshold voltage, which are employed in the present specification;

FIG. 1B is an explanatory diagram illustrating circuit symbols of inverters using MOSTs different in threshold voltage, which are employed in the present specification;

FIG. 1C is an explanatory diagram showing a relationship of voltages applied to each MOST;

FIG. 2A is a conceptual diagram showing in principle one example of the present invention relative to a pMOST in an output stage circuit;

FIG. 2B is a conceptual diagram showing in principle one example of the present invention relative to an nMOST in an output stage circuit;

FIG. 3 is an explanatory diagram showing a relationship between threshold voltages and operating voltages of MOSTs;

FIG. 4A is a circuit diagram showing a small amplitude input/output CMOS dynamic circuit and its input circuit as an example in which the present invention is applied to a driver;

FIG. 4B is an operation timing chart of the circuits shown in FIG. 4A;

FIG. 5 is a circuit diagram illustrating a circuit available instead of an input transistor M1 shown in FIG. 4A;

FIG. 6A is a circuit diagram illustrating another circuit available instead of the input transistor M1 shown in FIG. 4A and its timing chart;

FIG. 6B is a circuit diagram illustrating a circuit available instead of the input transistor M1 shown in FIG. 4A and its timing chart;

FIG. 7A is a circuit diagram showing another example in which the present invention is applied to a driver;

FIG. 7B is an operation timing chart of the circuit shown in FIG. 7A;

FIG. 8 is a circuit diagram illustrating a circuit available instead of an input transistor M1 shown in FIG. 7A;

FIG. 9A is a circuit diagram illustrating another circuit available instead of the input transistor M1 shown in FIG. 7A and an operation timing chart thereof;

FIG. 9B is a circuit diagram illustrating a further circuit available instead of the input transistor M1 shown in FIG. 7A and an operation timing chart thereof;

FIG. 10A is a circuit diagram illustrating a CMOS dynamic circuit for converting a small amplitude voltage operation to a large amplitude operation voltage, which corresponds to FIG. 4A;

FIG. 10B is a circuit diagram illustrating a large output amplitude circuit corresponding to FIG. 7A;

FIG. 11 is a circuit diagram showing a CMOS dynamic circuit for converting a large amplitude voltage operation to a small amplitude voltage operation;

FIG. 12 is a circuit diagram showing an example applied to a NAND circuit;

FIG. 13 is a circuit diagram showing an example applied to a NOR circuit;

FIG. 14 is a circuit diagram showing an example applied to a power switch;

FIG. 15A is a circuit diagram showing a small amplitude output CMOS dynamic circuit and its input circuit as an example in which the present invention is applied to an inverter;

FIG. 15B is an operation timing chart of the circuits shown in FIG. 15A;

FIG. 15C is a circuit example for driving the gate of a precharge pMOST M2 shown in FIG. 15A;

FIG. 16 is a circuit diagram illustrating a further speeded-up circuit of FIG. 15A;

FIG. 17A is a circuit diagram showing another example in which the present invention is applied to a driver;

FIG. 17B is a circuit diagram showing a further example comprised of multi-stage inverters, in which the present invention is applied to a driver;

FIG. 18A is a circuit diagram illustrating a circuit available instead of an input transistor M1 shown in FIG. 15A and an operation timing chart thereof;

FIG. 18B is a circuit diagram illustrating another circuit available instead of the input transistor M1 shown in FIG. 15A and an operation timing chart thereof;

FIG. 18C is a circuit diagram illustrating a further circuit comprised of two MOSTs instead of the input transistor M1 shown in FIG. 15A and an operation timing chart thereof;

FIG. 19A is a circuit diagram showing a small amplitude output CMOS dynamic circuit using a negative voltage and its input circuit as an example in which the present invention is applied to an inverter;

FIG. 19B is a circuit example for driving the gate of a precharge nMOST M2 shown in FIG. 19A;

FIG. 19C is an operation timing chart of the circuits shown in FIG. 19A;

FIG. 20 is a circuit diagram illustrating a further speeded-up circuit of FIG. 19A;

FIG. 21A is a circuit diagram showing another example in which the present invention is applied to a driver;

FIG. 21B is a circuit diagram showing a further example comprised of multi-stage inverters, in which the present invention is applied to a driver;

FIG. 22A is a circuit diagram illustrating a circuit available instead of an input transistor M1 shown in FIG. 19A and an operation timing chart thereof;

FIG. 22B is a circuit diagram illustrating another circuit available instead of the input transistor M1 shown in FIG. 19A and an operation timing chart thereof;

FIG. 22C is a circuit diagram illustrating a further circuit comprised of two MOSTs instead of the input transistor M1 shown in FIG. 19A and an operation timing chart thereof;

FIG. 23A is a circuit diagram of an inverter in which the present invention is applied to a circuit using a MOS capacitor;

FIG. 23B is an operation timing chart of the circuit shown in FIG. 23A;

FIG. 24A is a circuit diagram in which the present invention is applied to a converter using a feedback loop;

FIG. 24B shows a pre-stage circuit example of FIG. 24A;

FIG. 24C shows operating timings of FIG. 24A;

FIG. 25A is an applied example of FIG. 24A for selecting and driving a plurality of blocks;

FIG. 25B is an example applied to a NOR circuit;

FIG. 25C is an example applied to a NAND circuit;

FIG. 26 is an example of an inverter in which MOSTs for relaxing an excessive voltage are added to FIG. 15A;

FIG. 27 is a block diagram showing a configuration example of a chip in which small amplitude and large amplitude voltage operations are mixed;

FIG. 28A is a chip in which various operating voltages and clocks are generated;

FIG. 28B is a circuit example for generating a step-down source voltage from a source voltage of an I/O circuit unit; and

FIG. 29 is a circuit diagram showing a conventional example of a large amplitude voltage operating CMOS circuit.

EXPLANATION OF REFERENCE NUMERALS

-   -   IN/OUT input/output     -   DTC voltage detector     -   CVP/CNV voltage converter     -   IV/IVP/IVN inverters     -   SW1/SW2 switches     -   CK1/CK1B/CK2/CK3 clocks     -   V_(DD)/V_(SS) external source voltages to chip     -   V_(DH)/V_(D1)/V_(SH)/V_(SL)/Vref internal source voltages         generated inside chip     -   b11/b12 circuit sub blocks     -   CORE/CORE′ internal main circuits     -   CKG/VC clock generator and source voltage converter     -   CP comparator

BEST MODE FOR CARRYING OUT THE INVENTION

A CMOS circuit which corresponds to a circuit in which each MOST low in V_(T) is contained in an output stage, and in which the voltage amplitude of a load of the output stage is smaller than that of the gate of the MOST, or a semiconductor device equipped with the circuit will hereinafter be described in detail.

As a preparation for describing several embodiments, circuit symbols for MOSTs and inverters are shown below in FIGS. 1A and 1B. MOSTs sufficiently small (0V, for example) in V_(T) and MOSTs large (0.3V, for example as described above) in V_(T) are also shown together in FIG. 1A. An arrow indicates a substrate or a well. An nMOST is fixed to the lowest voltage or controlled to be the lowest voltage. A pMOST is fixed to the highest voltage or controlled to be the highest voltage. Incidentally, circuit symbols where the sources of nMOSTs and pMOSTs and the substrate are coupled are shown within a broken-line frame. Here, V_(T) is a gate voltage based on the source at which each MOST begins to turn on, as well known. Three types of inverters (corresponding to sub inverters to be described in the following sentences) in which the MOSTs low in V_(T) and the MOSTs large in V_(T) have been combined are also shown together in FIG. 1B. In the following embodiments, source voltages directly related to a main circuit (CORE), which are supplied from the outside of a chip (FIG. 28A to be described later) are V_(DD) and V_(SS) unless otherwise described in particular. When, for example, V_(DD) is 0.9V and V_(SS) is 0V, V_(DL) (0.6V, for example) and V_(SH) (0.3V) are internal source voltages generated inside the chip using these V_(DD) and V_(SS). A step-up source voltage V_(DH) and a negative voltage V_(SL) can also be generated within the chip from the external power supplies V_(DD) and V_(SS) as indicated in parentheses of FIG. 1C depending on the convenience of design. There are provided, for example, V_(DD)=0.3V, V_(SS)=0V, V_(DH)=0.6V, V_(SL)=−0.3V, etc. Since a mutual relationship between the magnitudes of voltages is stored even though the voltage settings are changed in this way, the description of the following circuit operations is common.

The concept of the present invention is shown in FIGS. 2A and 2B. Since a large load capacitance C_(L) (not shown in the figure) must be driven at high speed upon conduction (hereinafter called turning on) of a MOST (M) in each drawing, its channel width is extremely large. It is desired that V_(T) of the MOST is set as small as possible to provide a further speed-up. For example, V_(T) is sufficiently smaller than 0.3V referred to above. A depletion type (normally on) is also contained in an extreme example. Caution is however required where V_(T) is set to less than or equal to 0.3V as described above. This is because when V_(T) reaches less than or equal to 0.3V or so where the MOST is held in non-conduction (hereinafter called turning off), i.e., the voltage (V_(GS)) between the gate and source thereof is 0V, a subthreshold leakage current (hereinafter called leakage current) begins to flow between the drain and source thereof, and the leakage current is sensitive to the magnitude of V_(T) and becomes large one digit by one digit each time V_(T) is reduced 100 mV or so. Further, the leakage current is proportional to the channel width. In such an application that the spec of the leakage current is not so strict, the leakage current at the turning off is normally allowable even at V_(T)=0V or so. However, in such an application that the spec of the leakage current at standby is strict as in the case of a portable device or the like, the leakage current might not be allowed. Reducing V_(T) to less than or equal to 0V still more results in a large problem. If use is however made of the fact that the more a reverse bias is applied between the source and gate of the MOST in a time zone or period to turn off the MOST even though an actual V_(T) is low, the more V_(T) can effectively be increased, then the operating voltage V_(DD) can be reduced while the leakage current and speed remain maintained, thus enabling a reduction in power. This is because V_(DD) can be lowered by application of a deep reverse bias as will be described below. Thus, the application of the present invention enables a reduction in such leakage current of the output stage M.

FIG. 2A is an example in which the present invention is applied to a pMOST (M in the figure) of the output stage low in V_(T). A description will first be made of a case in which a high voltage V_(DH) is used. Since the pMOST is taken, the normal enhancement type (normally off) MOST is brought to a negative value in V_(T). The MOST is however of such a MOST low in V_(T) that a subthreshold leakage current substantially flows between the drain and source when the gate and source are rendered equal in voltage. A small or low voltage V_(DD) is applied to the source of the MOST. DTC is of a detector for detecting an input (IN) voltage. In the time period to turn off the MOST, a switch SW1 is turned on and a switch SW2 is turned off. Thus, since the DTC is separated from a node N of the MOST, i.e., the gate of the MOST, the node N is precharged to a voltage V_(DH) larger than a source voltage V_(DD) of the MOST independent of an input voltage. Thus, since a reverse bias is applied between the gate and source of the MOST by V_(DH)−V_(DD), its effective threshold voltage is increased by its bias, thereby resulting in −(V_(DH)−V_(DD))+V_(T). In order to perfectly cut off the MOST under this bias condition, the effective threshold voltage V_(T) may be set to less than or equal to −0.3V as mentioned above:

(V _(DH) −V _(DD))+V _(T)≦−0.3V  (1)

V _(DH)≧(V _(DD) +V _(T))+0.3V  (2)

After the switch SW1 has been turned off, the input (IN) voltage that has been determined up to now, is detected by the DTC in the time period to turn on the MOST and the switch SW2 is turned on, so that the node N remains at V_(DH) or is discharged to V_(SS) (0V). Assuming that the MOST M is turned on upon its discharge and the output OUT has been brought to 0V up to now, the output is charged to V_(DD) by a drain current Ip. The speed τ of charging the load is inversely proportional to the effective gate voltage V_(DD)+V_(T) of the MOST and approximately expressed as follows:

τ∞1/(V _(DD) +V _(T))  (3)

Thus, as shown in FIG. 3, the more V_(T) can be lowered, the more V_(DD) can be reduced under 0.3V and a constant effective gate voltage, i.e., a constant speed, thus enabling a reduction in power. When V_(T) of the enhancement type MOST is reduced from −0.3V to 0V, for example, V_(DD) can be reduced from 0.6V to 0.3V. Further, when a depletion type is taken and V_(T) is increased from 0V to 0.3V, V_(DD) can be further reduced. If V_(T)=0.2V, for example, then an ultra low-voltage operation of V_(DD)=0.1V is also enabled. In order to satisfy this condition while the leakage current at the turning off of the MOST is being reduced, V_(DH) may be set to a constant value (0.6V) or more as is apparent from the equation (2). There is however a case in which since V_(DH)−V_(DD) becomes large with it, i.e., the voltage applied between the gate and source of the MOST becomes large at its turning off, a circuit (shown in FIG. 26) for relaxing an excessive voltage is required as will be described later. In order to bring the MOST to a high speed operation by increasing the effective gate voltage under a constant V_(DD), V_(T) of the enhancement type MOST may be reduced, preferably, V_(T) may be made larger using the depletion type MOST. V_(DH) must be made larger as apparent from the equation (2) to suppress a larger leakage current as a matter of course.

Similarly, FIG. 2B is an example using a negative voltage V_(SL), i.e., an example applied to a low-V_(T) nMOST (M in the figure). If the polarity of the voltage is set in reverse, then the operation thereof can be explained in a manner similar to the pMOST. That is, M is being cut off upon non-selection. This is because, for example, V_(SL) (−0.3V) is applied to the gate of the MOST, V_(SS) (0V) is applied to the source thereof, and V_(T) (M) is reverse-biased by 0.3V with respect to the MOST of 0V. Upon activation of M, M is forward-biased by 0.3V where the input IN charges the gate voltage to V_(DD) (0.3V), so that a large load driving current In flows. Similarly, assuming that V_(SL) is set to a negative value to bring the leakage current at the turning off to a negligible degree, the following is established:

−V _(SL) +V _(T)≧0.3V  (4)

Since the nMOST is taken, V_(T) of the enhancement type (normally off) becomes a positive value if the enhancement type is used, whereas if the depletion type (normally on) is taken, its V_(T) becomes a negative value. Apparently, if the negative voltage V_(SL) is made large at the turning off, then the MOST can be cut off even if V_(T) of the nMOST is low. If V_(SL) is further made large, then the MOST can be cut off even in the case of the depletion type MOST, i.e., even when V_(T) is of a negative value. Sine the speed T of discharging a load of the MOST at its activation is approximately expressed in the following manner,

τ=1/(V _(DD) −V _(T))  (5)

the same speed can be realized by a low V_(DD), i.e., low power. Although the lower limit of V_(DD) and the voltage amplitude of the output were 0.6V in the conventional circuit as described above, the circuit can be operated at V_(DD) and voltage amplitude not greater than 0.6V in the present invention.

The above is similar even where internal source voltages V_(DL) and V_(SH) are used. A description will be made with FIG. 2A as an example, for example. Upon non-activation or deactivation, the switch SW2 is turned off by a clock CK2, so that a converter CVP is separated from the node N of the MOST, i.e., the gate thereof. Thus, when the switch SW1 is turned on by a clock CK1, the node N is precharged to a voltage V_(DD) larger than the source voltage V_(DL) of the MOST. In order to set the leakage current of the MOST as small as negligible under such a condition, V_(DL)−V_(DD)+V_(T) (M)≦−0.3V must be taken if the threshold voltage of the MOST is set to V_(T) (M). Here, the larger the difference voltage V_(DL)−V_(DD), the more the above condition is satisfied even at a smaller negative value of V_(T) (M) of an absolute value. This means that more speeding-up is enabled upon its activation. If the difference voltage is further increased, then a positive value is also allowed for V_(T) (M). That is, the leakage current of the MOST can be neglected, i.e., cut off even at the depletion type (normally on). Upon the activation, the switch SW1 is turned off by the clock CK1 and the parasitic capacitance of the node N is caused to hold the voltage V_(DD). Subsequently when the switch SW2 is turned on by the clock CK2 after the input IN has been determined, the binary voltage states of the input IN are detected by the detector DTC, and the node N remains at V_(DD) or discharged to V_(SH) according to the result of detection thereof. If the node N is at V_(DD), then the MOST remains cut-off. If the node N is at V_(SH), then the MOST is turned on, so that a large load driving current Ip flows. The smaller the absolute value of V_(T), the larger the corresponding current. The current further increases at the depletion type (normally on).

According to the principle described based on FIGS. 2A and 2B, in the CMOS circuit containing such a MOST (M) that the subthreshold leakage current substantially flows between the drain and source thereof when the gate and source are set to the equal voltage, the voltage is applied to the gate of the MOST (M) in the time period to turn off the MOST such that the reverse bias is applied between the gate and source of the MOST, and the MOST is held in the reverse bias state or controlled to the forward bias state according to the input voltage in the time period to turn on the MOST. Incidentally, the MOST can take on and off states even at both the activation and deactivation of the semiconductor device comprised of the CMOS circuit. That is, there is a case in which when the circuit is at the deactivation (standby, for example), as shown in FIG. 2A, the node N is brought to V_(DH) (or V_(DD)) to apply the reverse bias to the MOST thereby to turn off the MOST, and when the circuit is at the activation, the MOST is held in the reverse bias state (maintained at off) or forward bias state according to the input of the circuit thereby to turn on the MOST. Reversely to the above, there is also a case in which when the circuit is at the deactivation, the node N is brought to 0V to apply a forward bias to the MOST thereby to turn on the MOST and when the circuit is at the activation, the MOST is held at the forward bias or brought to the reverse bias state according to the input of the circuit thereby to turn off the MOST. Here, applying the voltage to the gate of the MOST (M) in such a manner that the reverse bias is applied between the gate and source of the MOST (M) means that when the MOST (M) is of a p-channel type, a voltage higher than that for its p-type source is applied to the gate thereof, and means that when the MOST (M) is of an n-channel type, a voltage lower than that for its n-type source is applied to the gate thereof. The present invention relates to the circuit using such a reverse bias. Incidentally, assume that in the interest of simplicity in the following description, V_(T) of the MOST is low like 0V, for example, and low and high V_(T) are respectively 0V and 0.3V even at other MOSTs.

An example applied to a driver is shown in FIGS. 4A and 4B. Incidentally, while the following embodiment will explain where internal source voltages V_(DL) and V_(SH) are used, no problem occurs even though the voltages are changed if the relationship between the magnitudes of the voltages is satisfied. Concrete circuits of the converter CVP shown in each of FIGS. 2A and 2B and an inverter IVP that configures an output stage are shown in the figure. They are coupled in series. The transistor M lying within each of FIGS. 2A and 2B corresponds to M6 or M3. M6 and M5 configure an inverter and drive a load with small amplitude (corresponding to the difference between V_(DL) and V_(SH)). The switch SW1 corresponds to M4 or M2. The converter CVP comprises a pMOST (M1) of an input unit, which assumes the role of a switch for capturing an input IN signal having low amplitude and assumes the role of discriminating the magnitude of the signal, an nMOST (M3) that receives an output thereof therein, and a switch nMOST (M2) for precharging an output unit of the nMOST (M3) to V_(SS) (0V). Here, V_(T) of M1 and M3 are respectively brought to small values in such a manner that a small signal input can be detected at high speed. In order to cut off M3 upon non-selection even at low V_(T), V_(SH) is applied to its source as shown in FIG. 4B. Thus, a node N2 is maintained at a precharge voltage V_(DD). Here, circuit operations will be explained below under the assumption of, for example, V_(DD)=0.9V, V_(DL)=0.6V, V_(SH)=0.3V, V_(SS)=0, low V_(T)=0V and high V_(T)=0.3V.

No leakage current flows upon the deactivation, i.e., during the period in which CK2 is V_(DL), if the input IN voltage is V_(SH). This is because a reverse bias of 0.3V is added to a gate-to-source voltage (V_(GS)) at V_(T) (M1)=0V. Since V_(GS)=0V if the input voltage is V_(DL), a slight leakage current flows through V_(SS) (0V) of M2. Since, however, M2 is turned on, the node N1 is maintained approximately at V_(SS). Here, the node N2 is precharged to V_(DD) and the output OUT is discharged to V_(SH) by M5. Since V_(DD) is of a high voltage, the corresponding MOST is sufficiently turned on even though V_(T) of M5 is large. When CK2 is brought to V_(SH) to reach an input signal detecting period upon activation, V_(GS)=0V if the input is V_(SH) (0.3V). Therefore, a slight leakage current flows and attempts to charge the node N1 to V_(SH) gradually. The node N1 may however be assumed to be maintained at a substantially constant V_(SS) (0V) in a practical range in which a clock width is a nanosecond. Thus, M3 remains cut-off. If, however, the input is V_(DL) (0.6V), then V_(GS) of M1 goes to V_(DL)−V_(SH) (=0.3V) to turn on it, so that the gate of M3 is charged to V_(DL). Thus, M3 is forward-biased by 0.3V to be turned on, and the node N2 is discharged and brought to V_(SH). Consequently, since M6 is forward-biased like V_(GS)=V_(DL)−V_(SH)=0.3V, the load capacitance of the output is charged from V_(SH) taken up to now to V_(DL) at high speed.

In the embodiment shown in FIGS. 4A and 4B, power consumption is reduced in the following manner. The parasitic capacitances C_(N1) and C_(N2) of the nodes N1 and N2, and the load capacitance C_(L) (not shown in the figure) of the output OUT are driven by their corresponding amplitudes 0.6V, 0.6V and 0.3V. Normally since C_(L) is sufficiently large and C_(N1) and C_(N2) are sufficiently small, the entire power consumption is determined substantially by charge/discharge power of the load capacitance C_(L). In conventional FIG. 29, C_(L) is driven with an amplitude of 0.6V, whereas in the present embodiment, C_(L) is driven with an amplitude equal to half the amplitude of 0.6V, so that the power consumption is reduced to ¼. Incidentally, an increase in power consumed by causing each of the clocks CK1, CK1′ and CK2 to drive each MOST is so small that it may be ignored. This is because since the voltage amplitudes of these clocks are 0.6V or 0.3V and it is enough for related MOSTs to simply drive their corresponding nodes each having a small parasitic capacitance, their gate capacitances are small. If V_(T) of M2 and M4 are reduced to 0V, then the required clock width can be set even to 0.3V and power related to each clock can be further reduced. Incidentally, a circuit shown in FIG. 5 can also be used instead of the input transistor M1. M11 is a pMOST for detecting an input signal and M12 is a MOST for strobing the input signal. If M12 is turned on by CK2 after the input has been determined, then the circuit becomes the same function as that of the input unit of CVP shown in FIG. 4A. Since no clocks are required where the input is always fixed to V_(SH) upon deactivation, this function can be realized easier. This is because if a dc voltage of V_(SH) is applied to the gate of M1 as shown in FIG. 6A, binary voltages determined with the timing provided to turn off M1 upon deactivation and turn on CK2 upon activation are inputted to M1. The example of FIG. 5 becomes simple as shown in FIG. 6B.

Another example applied to a driver is shown in FIGS. 7A and 7B. This is an example in which the nMOSTs lying within the circuit of FIG. 4A are replaced with pMOSTs and the pMOSTs are replaced with nMOSTs. With their settings, the relationship between voltages becomes opposite to FIG. 4A. For example, upon deactivation, nodes N1 and N2 are respectively precharged to V_(DD) and V_(SS), and an output OUT becomes V_(DL). Since M3 and M5 low in V_(T) (0V) are reverse-biased to 0.3V, they are cut off. Since a gate-to-source voltage is V_(DL) (0.6V) even at a high V_(T) (0.3V), M6 is turned on, so that the load becomes V_(DL). FIG. 8, FIG. 9A and FIG. 9B respectively show examples corresponding to FIG. 5, FIG. 6A and FIG. 6B with respect to FIGS. 7A and 7B.

While each of the embodiments shown in FIGS. 4A and 4B and FIGS. 7A and 7B shows the embodiment in which the large load is driven by the small amplitude input (0.3V from V_(DL) to V_(SH)) to the same small amplitude output, FIG. 10A is a circuit for performing conversion from a small amplitude input (0.3V from V_(DL) to V_(SH)) to a large amplitude output (0.9V from V_(DD) to V_(SS)). Such conversion can be realized by simply changing source voltages and V_(T) while the circuit format shown in FIGS. 4A and 4B are being maintained. Here, the details of an internal circuit are omitted and circuit blocks are indicated by the terminal names of FIG. 4A. For the large amplitude output, the voltages V_(SS) and V_(DD) are respectively applied to the sources (terminals e and d) of M5 and M6 shown in FIG. 4A. Since, however, the gate and source of M6 become voltages equal to each other upon deactivation thereof, V_(T) of M6 may still be set large to prevent a leakage current from flowing through M6. Since M5 must be cut off upon activation thereof when the node N2 is discharged and M6 is turned on, the voltage subsequent to the discharge of the node N2 is required to be V_(SS). That is, the voltage to be applied to the terminal b lying in the CVP of FIG. 4A must be changed from V_(SH) to V_(SS). In order to cut M3 in that state upon deactivation thereof, a sufficient negative voltage (−Δ) must be applied to the gate of M3, i.e., the same negative voltage must be applied to its corresponding terminal c. With its application, the voltage on the low level side of the clock CK1′ must also be changed to be equal to the negative voltage. FIG. 10B is a large output amplitude circuit corresponding to FIG. 7A. Similarly, M5 lying within FIG. 7A is changed to a large V_(T) and V_(DD)+Δ must further be applied to a terminal h.

FIG. 11 is a circuit for performing conversion from a large amplitude input (0.9V from V_(DD) to V_(SS)) to a low amplitude output (0.3V from V_(DL) to V_(SH)). Both an nMOST and a pMOST for the output are a low V_(T). Their gate voltages become either of V_(DD) and V_(SS) according to an input IN, and each output MOST brought to off is always reverse-biased by V_(DD)−V_(DL) or V_(SH)−V_(SS). Therefore, the leakage current can be neglected. Since each turned-on MOST is a low V_(T), the load can be driven with low amplitude at high speed.

Each of FIGS. 12 through 14 is an applied example of each embodiment described up to now. FIG. 12 is an application to a NAND circuit. CVP shown in FIG. 4A is vertically stacked in the form of five stages and IVP is coupled in common to the top of the stages. Since the NAND circuit is heavily used on one chip as an address decoder for a memory, and an address input wiring corresponding to the input of the NAND circuit is long and its capacitance is large, a small amplitude operation is desired. Since all address inputs are fixed to a low voltage level (V_(SH) for example) when the decoder is at deactivation, its input unit can be simplified as shown in FIGS. 6A and 6B. When any of plural address inputs (five inputs from IN0 to IN4) is brought to a high voltage level (V_(DL)) and its decoder is selected, a node N2 brought to V_(DD) up to now is discharged to V_(SH) and a decoder output OUT brought to V_(SH) becomes V_(DL). If even one input of a low voltage level exists in the plural address inputs, then an output OUT of such a non-selected decoder remains at V_(SH). FIG. 13 is an example applied to a NOR circuit. An IVP is series-coupled in common to five CVPs coupled in parallel. When at least one input is brought to the high level (V_(DL)) upon activation, the output OUT brought to V_(SH) up to now changes to V_(DL).

FIG. 14 is an example applied to a power switch. CVN and CVP are coupled to a common source unit of a large scale circuit CORE′ operated with small amplitude. The power switch is used to turn off the power supply of CORE′ upon at least deactivation or standby for the purpose of cutting a large leakage current developed in CORE′. An extremely large MOST is used for a power switch MOST (corresponding to M3 lying within CVP or CVN in each of FIGS. 4A and 7A) to process large current at the activation of CORE′, and its gate capacitance becomes large. It is thus desired that since power for driving such a MOST increases normally, its gate is driven by a small amplitude signal. FIG. 14 is a circuit used therefor. Upon activation, V_(SH) and V_(DL) are respectively applied to inputs IN and IN′ to turn on CVN and CVP. V_(DL) and V_(SH) appear at terminals f and a and these become source voltages for CORE′. When V_(DL) and V_(SH) are respectively applied to the inputs IN and IN′ where it is desired to deactivate CORE′ (turn off the power), CVN and CVP are turned off so that they are separated from CORE′, whereby no source voltages are supplied to CORE′.

FIG. 15 is an applied example of FIG. 2A and is an inverter in which both input/output amplitudes are V_(DD). Incidentally, while the following embodiment will be explained using a step-up source or power supply V_(DH) and a negative voltage V_(SL), the voltages can be changed if the relationship between the magnitudes of the voltages is satisfied. The entire circuit configures one inverter. A concrete example illustrative of the detector DTC, switch SW1 and output circuit in FIG. 2A is shown. DTC corresponds to an nMOST M1, SW1 corresponds to a pMOST M2 and M corresponds to a pMOST Mp lying within a sub inverter IV. Incidentally, although FIG. 4A has described that the switch SW1 in FIG. 2A has been contained in the inverter IVP, the following description will be made with the switch being contained in CVP. This difference is however a difference on description. No particular difference occurs in terms of the essence of the invention about whether the switch SW1 is contained in either IVP or CVP. In the following embodiment, a precharge MOST having a function similar to that of each of the precharge MOSTM2 and M4 shown in FIG. 4A will be explained as M2. V_(T) of M1 is set to a small value (0V) to discriminate a possible low V_(DD) input at high speed. Further, V_(T) of M2 is set to a large value like 0.3V to suppress a leakage current at its own off. Since M2 is operated at a large voltage V_(DH), it is allowed. Further, V_(T) of Mp is selected to be 0V. Thus, V_(DD)=0.3V and V_(DH)=0.6V as apparent from FIG. 3. With a random input taken as an example, its operation will be explained below. Since CK2 and CK1 are both 0V, M1 is off and M2 is on as shown in FIG. 15B when the inverter is at deactivation, a node N is maintained at V_(DH). Thus, a high-V_(T) nMOST Mn in the sub inverter IV is turned on so that the output is brought to 0V. Since a reverse bias corresponding to only V_(DH)−V_(DD) (=0.3V) is applied to Mp of a low V_(T) in the sub inverter IV during this period, its leakage current can be ignored. During this period, no leakage current flows through M1 if an input IN voltage is V_(DD). This is because V_(T) is 0V and the reverse bias of 0.3V is added to a gate-to-source voltage (V_(GS)). Since V_(GS)=0V when the input voltage is 0V, a slight leakage current flows from a V_(DH) terminal of M2 to an input IN. Even though this current shows no problem in the case of M1 having V_(T)=0V or so, the current shows a problem where V_(T) is further reduced and a low V_(DD) operation is further performed. As will be described later, this problem can of course be solved if the input IN placed during a deactivation period is always fixed to V_(DD) without at random.

Immediately before the activation of the circuit, CK1 is brought to V_(DH) so that M1 is turned off, and the node N is brought to a floating state. Thereafter, when CK2 is brought to V_(DD) and an activation period for detecting an input signal is reached, the gate-to-source voltage V_(GS) of M1 becomes 0V if the input is V_(DD). Therefore, a light leakage current flows through M1 and will gradually discharge the node N placed in the floating state up to now. The node N is however assumed to be maintained at a substantially constant V_(DH) (0.6V) in a practical range in which a pulse width of CK2 for capturing the input is a nanosecond. Thus, Mp lying in the sub inverter IV remains cut-off. If, however, the input is 0V, then V_(GS) of M1 goes to V_(DD)−V_(T) (=0.3V) to turn on it, so that the node N is discharged to 0V. Thus, Mp is forward-biased by V_(DD) (0.3V) to be turned on, so that the output OUT is charged to V_(DD). Since V_(T) of MOST Mn lying in the sub inverter IV is large at this time, no leakage current flows even when its drain voltage is V_(DD). In order to provide a deactivation state subsequently, CK2 is brought to 0V to turn off M1 and then CK1 is brought to 0V to turn on M2 for the purpose of preventing a ratio current to flow between M1 and M2. Consequently, the node N is restored to V_(DH). In the embodiment shown in FIG. 15A, power consumption is reduced in the following manner. A parasitic capacitance C_(N) of the node N and a load capacitance C_(L) (not shown in the figure) of the output OUT are respectively driven at 0.6V and 0.3V. Since C_(L) is normally sufficiently larger than C_(N), the overall power consumption is determined according to substantially charge/discharge power of C_(L). Under the same effective gate voltage as 0.3V, C_(L) is driven with an amplitude of 0.6V in the conventional circuit (refer to FIG. 17), and C_(L) is driven with an amplitude equal to half the amplitude of 0.6V in the present embodiment. Therefore, the power consumption is reduced approximately to ¼. Incidentally, although CK1 and CK2 are extra clocks than conventional, an increase in power consumption by these is so small that it may be ignored. This is because the load capacitance due to these is smaller than C_(L) and if a slight leakage current is allowed as will be mentioned later, then the voltage amplitude of each related clock can be reduced like 0.3V. Although the above embodiment has been done assuming that for simplicity of description, V_(T) large uniformly with respect to all MOSTs is 0.3V and V_(T) low uniformly therewith is 0V, they can be suitably changed according to the spec of the leakage current and the need for the discharge velocity of the node N. As to the spec of the leakage current, for example, the circuit must generally suppress the leakage current at its deactivation (period in which CK1 and CK2 are both 0V) severer. Attention should therefore be given to MOSTs (Mp, M2 and M1) through which the leakage current is likely to flow during this period. It is also necessary to pay attention even to V_(T) of MI in terms of the discharge velocity of the node.

Assuming that V_(T) of M1 and M2, and V_(T) of Mp and Mn in the sub inverter IV are respectively set to V_(T) (M1), V_(T) (M2), V_(T) (Mp) and V_(T) (Mn), and the effective gate voltage necessary at the turning on of each MOST is 0.3V, the following equations are established at the respective MOSTs.

<<1>> Mp: V_(DH)≧{V_(DD)+V_(T) (Mp)}+0.3V from the equations (1) and (2) to cut off it at a gate voltage of V_(DH), and V_(DD)+V_(T) (Mp)≧0.3V therefrom to turn on it at a gate voltage of 0V. Under these conditions, the value of V_(T) (Mp) can be changed arbitrarily and V_(DD) and V_(DH) can also be changed according to it. As described above, FIG. 3 is the example of V_(DD)+V_(T) (Mp)=0.3V.

<<2>> Mn: V_(T) (Mn)≧0.3V to cut off it at a gate voltage of 0V without the leakage current, and V_(DH)−V_(T) (Mn)≧0.3V to turn on it at a gate voltage of V_(DH). Thus, these conditions are established if V_(DH)≧0.6V. Of course, V_(T) (Mn) can be reduced to 0V or so if a slight leakage current is allowed at off.

<<3>> M2: V_(T) (M2)≦−0.3V to cut off it at a gate voltage of V_(DH) without the leakage current, and V_(DH)+V_(T) (M2)≧0.3V to turn on it at a gate voltage of 0V. Thus, these conditions are established if V_(DH)≧0.6V. Since V_(T) (M2) can of course be reduced to 0V or so if a slight leakage current is allowed at off, the design thereof becomes easy. This is because since the amplitude of CK1 can be reduced to V_(DH)−V_(DD) (=0.3V), the charge/discharge power of a load for a CK1 generating circuit can be lowered. Since CK1 is V_(DD) (0.3V) upon deactivation of the circuit (at the turning on of M2) in this case, the gate-to-source voltage becomes V_(GS)=V_(DH)−V_(DD)=0.3V so that M2 is turned on. Further, since CK1 is V_(DH) (0.6V) upon activation of the circuit (at the turning off of M2), the gate-to-source voltage becomes V_(GS)=0 so that M2 is brought approximately to off. FIG. 15C is one example of such a CK1 generating circuit. An input pulse having an amplitude V_(DH) is converted to a desired CK1 pulse without the leakage current by a sub inverter IV in which MOSTs having low and high V_(T) are combined together.

<<4>> Since V_(T) (M1) of M1 is related to the effective gate voltage of M1 as shown below, it is closely related to V_(DD). While CK2 is brought to V_(DD) to activate M1, the current In (V_(DD)) where the input is V_(DD) is small because its gate-to-source voltage becomes 0V, whereas the current In (0) where the input is 0V is large because its gate-to-source voltage becomes V_(DD). Although even a current of 0 or more is allowed if the difference between the currents In (V_(DD)) and In (0) is greater than or equal to a given value, i.e., it is allowed even when M1 is a certain degree of depletion type, assume that In (V_(DD))=0, i.e., V_(T) (M1)≧0V in an enhancement type for simplicity herein. In doing so, the node N is maintained at V_(DH) given up to now if the input is V_(DD). On the other hand, if the input is 0V, then the node N begins to discharge from the V_(DD) level. It is assumed that the discharge of the node to V_(DD)+V_(T) (MP) is allowed. This is because when the node is discharged to this point, a critical point at which the logical state placed up to now, of the sub inverter IV changes is reached. This is also because at least MP will begin to turn on, and on the other hand, when V_(DD)+V_(T) (Mp) is larger than V_(T) (Mn), Mn will begin to turn off. The relationship between a required V_(T) (M1) and V_(DD) is determined in the following manner under the effective gate voltage V_(DD) of Mp+V_(T) (Mp)=0.3V and V_(DH)=0.6V. Assume that the pulse width of CK2 is t_(W), the capacitance of the node N is CN, the channel width of M1 is W, and the channel length thereof is L. When the critical point is reached after t_(W) from the application of CK2, M1 is operated in a saturated state during this period and hence the following equations are established:

In (0)=C _(N)(V _(DH) −V _(DD))/t _(W)=0.3×C _(N) /t _(W)

In (0)=β/2{V _(DD) −V _(T)(M1)}² ,β=W/Lβ ₀

∴{V _(DD) −V _(T)(M1)}²=0.6C _(N) /βt _(W)  (6)

Since the right side of the equation (6) is a constant, the more V_(T) (M1) is decreased, the more V_(DD) can also be reduced. In a 65 nm device technology, for example, V_(DD)=0.12V where W/L=140 nm/50 nm, β₀=0.43 μS/V, C_(N)=1.8 fF and t_(W)=2.5 ns if V_(T) (M1)=0V. Thus, M1 discriminates the input at V_(DD) greater than the above. When Mp is operated with V_(DD) as a source voltage, V_(T) (Mp)=0.18V is reached from the condition of V_(DD)+V_(T) (Mp)=0.3V. Therefore, Mp must be a depletion type. When this V_(DD) is taken, power consumption is brought to about 1/25 as compared with the conventional 0.6V-opearated circuit (FIG. 17).

FIG. 16 is an example in which the nMOST lying within the sub inverter IV of FIG. 15A is separated and added to the output. While CK1B corresponding to an inverted signal of CK1 is newly required to precharge the output to 0V, the corresponding circuit is operated faster. This is because the capacitance of the node N is lightened by the absence of the gate capacitance of Mn. Incidentally, since V_(T) of Mn is selected widely, CK1B becomes a high-amplitude pulse changed from 0V to V_(DH). If V_(T) of Mn is however reduced to 0V or a depletion type is taken, then CK1 must be maintained at a high-amplitude V_(DH) pulse but CK1B can be brought to a low-amplitude V_(DD) pulse. This is because since the output OUT is 0V, thus the source and drain of Mn become a potential equal to 0V upon deactivation, no leakage current flows even at such V_(T). Although a slight leakage current however flows so long as the output OUT reaches V_(DD) upon activation, the current is so mall that it may be ignored as compared with another activation current. When the leakage current cannot be still ignored, the gate and source of Mn may be controlled according to upon its activation and deactivation as will be described later.

FIG. 17 is an inverter or driver in which both input/output amplitudes are V_(DD). While this makes use of the voltage converter CVP shown in FIG. 15A, a circuit from an input IN to N′ can be assumed to be the detector DTC and switch SW2 of the input shown in FIG. 2A. Unlike FIG. 15A and FIG. 16, however, FIG. 17 is an example in which a low-V_(T) pMOST lying within a sub inverter IV operated at V_(DD) upon deactivation of the circuit, and a reverse bias is applied between the gate and source thereof upon its activation. That is, while the output OUT becomes V_(DD) since the gate of the pMOST is turned on at 0V upon deactivation, the node N′ is maintained at 0V or brought to V_(DH) according to the input IN upon activation. If it is brought to V_(DH), then the output OUT is discharged to 0V but no leakage current flows through pMOST at this time. This is because the gate of the pMOST is reverse-biased by V_(DH)−V_(DD). In FIG. 17B, multistage (n stages) sub inverters IV which are operated at V_(DH) and capable of ignoring the leakage current, are coupled, and a sub inverter IV operated at V_(DD) is coupled to a final stage. The entire circuit takes the inverter or driver depending on the number of stages. Since a voltage relationship similar to FIG. 17A is established at the final stage and its previous stage, the entire leakage current is so small that it may be ignored. Here, the multistage sub inverters act as buffers. Since the size of each sub inverter can be gradually reduced toward its previous stage even when the load capacitance of the output OUT is large in particular, eventually, the size of the sub inverter coupled directly to the node N can be minimized and its input capacitance, i.e., the capacitance of the node N can be made extremely small. Thus, even M1 and M2 lying in CVP can control the voltage of the node N at high speed.

FIG. 18 shows another embodiment illustrative of the detector DTC and switch SW2 shown in FIG. 2A. FIG. 18A is a circuit identical to the input transistor M1 of FIG. 15A but different in how to apply the voltage. The input at deactivation thereof is random in FIG. 15A, whereas the input is always fixed to V_(DD) in the present example. Since the gate of an nMOST is 0V and a node N is V_(DH), a reverse bias of only V_(DD) is applied between the gate and source of M1, and its leakage current becomes so small that it may be ignored. If V_(DD) is applied to the gate after the input IN has been determined, then the voltage of the node N is determined upon activation according to the input as mentioned above. Incidentally, if the input is fixed to V_(DD) upon deactivation, then the gate of M1 might not be controlled purposely by its corresponding pulse. This is because M1 is almost off upon deactivation by simply applying a dc voltage of V_(DD) at all times, and M1 is automatically operated according to determined binary input voltages upon activation. Upon the deactivation, however, a slight leakage current flows through M1 since 0V is applied between the gate and source thereof and V_(T) is 0V. When it is however allowed, its design becomes simple by the absence of the need to control the gate by the corresponding pulse. The same function is obtained even in FIG. 18B in which the gate and source of MOST in FIG. 18A are interchanged. Similarly, if the gate is brought to 0V upon deactivation and the source is brought to V_(DD), then the leakage current at the deactivation can be ignored. Although the slight leakage current flows upon the deactivation if the source is brought to 0V as a matter of course, MOST is operated normally according to the input upon its activation. FIG. 18C is another example of a gate input. Upon the deactivation, the input is fixed to 0V. If M12 is turned on by CK2 having a V_(DD) amplitude after the input has been determined, it becomes the same function as M1 of FIG. 15A. Since M11 and M12 are both low in V_(T) although being off upon their deactivation, there is a possibility of a slight leakage current flowing therethrough. When, however, MOSTs each placed in the off state are series-coupled two or more as already known, the leakage current becomes small due to vertical stack effects thereof. That is, since M11 is seemed to be certain impedance when the leakage current attempts to flow through both MOSTs, a low or small voltage δ appears at the source S of M12 and a reverse bias is applied between the gate and source thereof by δ, so that the leakage current of M12 becomes small correspondingly. This is eventually because the leakage current flowing through both MOSTs is suppressed by the leakage current of M12 itself, which has been reduced. Incidentally, CK2 and the input IN may be interchanged with each other as needed. Although V_(T) of M12 has been selected to be low to bring CK2 to the low amplitude of V_(DD) in FIG. 18C, the leakage current at the deactivation becomes so small that it may be ignored independently of the input, where CK2 changed from 0V to V_(DH) can be used. This is because since V_(T) of M12 can be selected widely, M12 is perfectly cut off at off. Incidentally, FIG. 18 corresponds to FIGS. 5 and 6 referred to above. It is needless to say that the items described in detail in FIG. 18 are applicable even to FIGS. 5 and 6. Needless to say, the items described in FIGS. 5 and 6 are applicable to FIG. 18 in reverse.

FIG. 19 is an example applied to an inverter in which both input/output amplitudes are V_(DD). This is an example in which the nMOST lying in the circuit of FIG. 15A is replaced with a pMOST and the pMOST lying therein is replaced with an nMOST. Although the relationship between voltages becomes opposite to FIG. 15 with their replacement, their operations can also be explained in like manner. Upon deactivation, for example, the node N is precharged to a negative voltage V_(SL), and the nMOST Mn lying in a sub inverter IV is cut off since it is reverse-biased by 0.3V even though its V_(T) is low like 0V. On the other hand, since the pMOST lying in the sub inverter IV is turned on even if its V_(T) is large like 0.3V, an output OUT is brought to V_(DD). FIG. 20 corresponds to FIG. 16, FIG. 21 corresponds to FIG. 17, and FIGS. 22A through 22C respectively correspond to FIG. 18A through 18C. Incidentally, CK1B shown in FIG. 9 is an inverted signal of CK1 changed from V_(SL) to V_(DD).

If the two sources or power supplies (V_(DD) and V_(DH) or V_(DD) and V_(SL) except for ground V_(SS)) are used as described above, then a small number of MOST can configure a low voltage/low power circuit. Various embodiments will further be described below with the use of V_(DD) and V_(DH) taken as an example. FIG. 23 is an embodiment of an inverter in which input/output amplitudes are both V_(DD). This is however different from one used up to now in that the capacitance included in each MOST itself is used. It is well known that if a gate (G) voltage is higher V_(T) or above than a source (S) voltage or a drain (D) voltage, then a large MOS capacitance Cb determined by the thickness of a gate oxide and a gate area is formed between the drain and gate or between the gate and source. This embodiment is an inverter using the present characteristics. Namely, a switch SW1 is first turned on by a clock CK1 to discharge a node N to 0V. Thereafter, the switch SW1 is turned off. Although a pMOST in a sub inverter IV is turned on so that an output OUT is brought to V_(DD), no subthreshold leakage current flows because an nMOST in the sub inverter IV is large in V_(T). Thereafter, a switch SW2 is turned on by CK2 to input V_(DD) greater than or equal to V_(T) corresponding to the input voltage or 0V less than or equal to V_(T) to the gate of the MOST M1, thereby turning off the switch SW2. Afterwards, a clock CK3 having an amplitude V_(DH) is inputted to the drain thereof. Since the MOS capacitance Cb is large if the gate voltage is V_(DD), the gate voltage V_(G) is raised and its value reaches V_(G)=V_(DD)+αV_(DH), α=Cb/(Cb+Cp). Here, Cp is a parasitic capacitance at the gate and a value extremely smaller than Cb. If the value of the raised V_(G) is selected to be greater than or equal to the sum of V_(DH) and V_(T), then the amplitude V_(DH) of the clock CK3 appears at the source as it is. Thus, the output OUT is discharged by the nMOST lying in the sub inverter IV at high speed. Since a reverse bias is applied between the gate and source of a low-V_(T) pMOST in this case, no subthreshold leakage current flows. Thus, this example is an example in which a reverse bias is applied upon activation as shown in FIG. 17A. On the other hand, since Cb is approximately zero if the input is 0V, VG remains approximately 0V and the MOST M1 is cut off so that no voltage appears at the node N. Accordingly, the output OUT remains at V_(DD). Thus, when the MOS capacitance is used, the difference between V_(DD) and 0V at the input IN is amplified to V_(DH) and 0V at the node N. In the present embodiment, the input IN to the node N corresponds to the DTC and switch SW2 of FIG. 2A.

FIG. 24A is a system that controls the switch SW1 of FIG. 2A by the voltage of an output OUT. An output (NT) voltage of a driver in which the embodiments of FIGS. 16 and 17A have compromised with each other, is fed back to control a pMOST M2 lying in a voltage converter CVP. Here, a low V_(T) is used for M1 and Mn to bring the amplitudes for CK2 and CK1B to V_(DD) as mentioned above. The operation of the system will be explained below assuming that a circuit shown in FIG. 24B is coupled to a stage prior to the input IN. Since M00 is on and M01 is off upon deactivation (CK2: 0V and CK1B: V_(DD)) irrespective of the state of an input in of a pre-stage circuit, the input IN is charged to V_(DD) so that a pMOST M2 lying in CVP with an output N′ of 0V as a gate voltage, so the node N is discharged to V_(DH). Next, upon circuit's activation, i.e., when the input in of the pre-stage circuit is determined and the clock CK2 is brought to V_(DD) to activate the circuit, the operation differs according to the input state. Since M1 is turned on if the input IN is 0V, the voltage of the node N is reduced slightly from V_(DH). This is because the voltage is determined by the proportion (so-called ratio) between the conductance of M1 and that of M2. In doing so, an output MOST Mp assumes the direction to be turned on and hence the voltage of the output N′ slightly rises, so the pMOST M2 assumes the direction to be turned off. Thus, the voltage of the node N is lowered from the first value. With such a feedback, the node N is rapidly discharged to 0V, so that the pMOST Mp is perfectly turned on. Thus, the output (node N′) is finally charged to V_(DH) and thereafter the output OUT of a sub inverter IV at its subsequent stage is brought to 0V. Since a reverse bias is applied between the gate and source of the pMOST lying in the sub inverter IV of the subsequent stage in this case, no leakage current flows. In this state, M2 is cut off, thus the gate voltage of M2 becomes V_(DH). Upon the next deactivation, Mn is turned on by CK1B so that the node N′ begins to discharge from V_(DH). In doing so, the pMOST M2 lying in CVP begins to turn on thereby to charge the node N. Eventually, the node N, node N′ and output OUT are respectively restored to V_(DH), 0V and V_(DD) again at high speed by feedback effects. Incidentally, since the input MOST M1 remains off if the input IN is V_(DD), an internal voltage and an output voltage remain in a deactivated state. The embodiment using this feedback has an advantage in that a pulse having a V_(DH) amplitude for controlling the gate of M2 is not necessary. This is because although the pulse of V_(DH)=0.6V must be supplied from outside where V_(DD) is 0.1V or so as mentioned above, for example, the design of the circuit becomes difficult by an increase in the difference between V_(DD) and V_(DH), and the loss of power to be used up or consumed is also large. When it is desired to operate the entire circuit at such a low and equal V_(DD), Mn may be set to a depletion type of V_(T)=0.2V or so. Since the effective gate voltage at on becomes 0.3V even at a clock of V_(DD)=0.1V and a drain-to-source voltage thereof is 0V at off, no leakage current flows even where Mn is of the depletion type. In order to bring V_(T) of Mn to an enhancement type of 0.3V or so and perfectly suppress the leakage current, the gate thereof may be controlled by a clock of 0.6V or so using another source voltage. Incidentally, even though the input pre-stage circuit (FIG. 24B) is comprised of MOSTs low in V_(T) as described above, the leakage currents of M01 and M02 become small due to the vertical stack effects thereof upon the deactivation. Since the load can be driven at the low voltage V_(DD) even in the present embodiment if the load capacitance of the output OUT is far larger than the node capacitance of the pre-stage, the entire circuit is brought to low power. However, considerable leakage current flows even if Mn is off during a period in which the output is V_(DH). In order to reduce it on the other hand, the gate and source (ground terminal of Mn in FIG. 24A) of Mn may respectively be controlled to be 0V and V_(DD) upon the activation of the circuit (i.e., during a period in which V_(DH) is being outputted) and to be V_(DD) and 0V in reverse upon the deactivation of the circuit (i.e., during a period in which a constant voltage of 0V is being outputted). In this case, however, the substrate or well for Mn must be fixed to 0V corresponding to the even lower voltage as mentioned above. The leakage current of Mn is lowered by the application of the reverse bias of V_(DD) between the gate and source of Mn during the period in which the output is V_(DH). The method for controlling the source and gate in this way upon the activation and deactivation is applicable even to FIG. 25B to be described later and Mn shown in FIG. 16, for example. Even when V_(T) of Mn in the figure is sufficiently lowered or the depletion type is adopted, a low V_(DD) operation is enabled by less leakage current.

Several applications each using the feedback system of FIG. 24A will be shown below. Incidentally, the following examples can be applied in like manner even to the examples free of the execution of the feedback, e.g., FIGS. 15A, 16 and 19A or FIG. 20, etc. A circuit shown in FIG. 25 comprises a voltage converter CVP group (CVP1 and CVP2), a selection circuit DEC (address decoder, for example) for selecting them, and a subblock group (b11 and b12) that configures a circuit block BL. Each subblock is a circuit which selects a specific word line from a large number of world lines in the case of, for example, the word lines (corresponding to OUT in the figure) lying in a memory array and supplies a voltage pulse to the selected word line. Alternatively, when a main circuit (sub core) comprised of a logical circuit is taken, the subblock is a power switch circuit which supplies a source or power supply voltage to the selected sub core or blocks or cuts off it. The power switch circuit will now be taken as an example. In a logical circuit block, large leakage current that flows within a block BL upon its deactivation or standby must be cut. To this end, a system is well known which subdivides the block into subblocks and controls a source voltage of each subdivided subblock. That is, attention is given to a certain subblock. Since there exit a time zone or period free of the need to supply the source voltage and a time period that needs its supply, the power of the sub core is turned off in the former time period, whereas the power thereof is turned on in the latter time period. Thus, a normal logical operation is enabled while suppressing the leakage current. Since, however, pMOSTs (MB1 and MB2) each of which controls the source voltage of each subblock, become extremely large to cause a large current to flow upon the activation of the sub core, their gate capacitances become large and hence power for driving such MOSTs become large. Therefore, such a circuit as shown in FIG. 25A capable of driving the gates thereof by an input (IN) signal corresponding to a small amplitude signal is desired. Here, the number of subblocks is assumed to be two for simplicity of explanation. Addresses with many subblocks being numbered are used as inputs in the address decoder DEC. However, assume here that two subblocks are selected as a pair and gate inputs (G1) of input MOSTs M1 of two voltage converters have been decoded to select one from the two subblocks. Upon the deactivation of the circuit, the leakage current of the entire circuit becomes so small that it may be ignored. This is because any of the decoder DEC unit, voltage converter CVP unit and block BL unit can suppress the leakage current smaller. That is, in the DEC unit, precharge MOSTs M0 are on and all of their input signals (a1, a2 and a3) are normally 0V. Thus, even if V_(T) of MOSTs that input the input signals are small, their leakage currents are reduced by vertical stack effects based on the appearance of source voltages (δ1 and δ2 in the figure). Since the inputs of the input MOSTs M1 lying within the CVP1 and CVP2 are V_(DD) and their gates (G1) are 0V in the input MOSTs M1, they are cut off. No leakage current flows even into each of Mn1 and Mn2 coupled to their corresponding outputs (OUT1 and OUT2). This is because the drains and sources thereof are 0V. Since the power control MOSTs (MB1 and MB2) lying in the block are on and low in V_(T) at this time, they supply large current to the respective subblocks even at a low voltage V_(DD). The operation of the circuit will be explained below while taking as an example the case in which upon circuit's activation, MB1 is selectively cut off to stop the supply of power to the subblock b11. When all address inputs are changed from 0V brought up to now to V_(DD), and CK2 and CK1B are respectively brought to V_(DD) and 0V, two subblocks are selected upon circuit's activation and the input IN is discharged to 0V. Subsequently, V_(DD) is applied to G1 that belongs to CVP1 desired to be selected. The corresponding node N1 is discharged and a voltage of V_(DH) is outputted to the output OUT1. Accordingly, a reverse bias is applied between the gate and source of MB1 so that MB1 is cut off, whereby the power of the subblock b11 is shut down. Since G1 that belongs to the non-selected CVP2 remains 0V (i.e., CVP2 remains in a non-selected state), the corresponding MB2 is held on. The present embodiment has an advantage in that the two CVPs can be shared even if the scale of the circuit coupled to the stage prior to the input IN is relatively large. Incidentally, since the input MOST M1 that belongs to CVP2 held in the non-selected state is 0V in its input and low in V_(T), the leakage current slightly flows therethrough. The leakage current is however so small that it may be ignored as compared with an active current for charging/discharging another node capacitance. When, however, V_(T) is further reduced to perform a low voltage operation, this leakage current become ineligible. In order to reduce it, the inputs of the plural voltage converters CVPs are separated/isolated from one another without sharing the inputs thereof, only the input of one converter to be selected is brought to 0V, and other inputs may be maintained at V_(DD).

FIG. 25B is an example in which the input MOST M1 units each lying in FIG. 15A are arranged in parallel. A NOR circuit is obtained wherein its input and output are a V_(DD) amplitude and its inputs are A and B. That is, when the inputs A and B are always 0V upon deactivation of the circuit and at least either one thereof changes to V_(DD) upon its activation, i.e., V_(DD) and 0V are respectively applied to the gate and source of at least one of MOSTs M11 and M12 as inputs, a voltage of V_(DD) is obtained at an output OUT. Since the gates and sources of M11 and M12 are respectively 0V and V_(DD) upon the deactivation, no leakage current flows through both MOSTs. FIG. 25C is a NAND circuit. Only when all inputs are 0V upon its deactivation and all the inputs are changed to V_(DD) upon its activation, a node N is discharged and a voltage of V_(DD) is obtained at an output OUT. Upon the deactivation, the leakage current is reduced by the vertical stack effects referred to above.

FIG. 26 is an example in which excessive voltage reduction MOSTs are used in FIG. 15A, for example. When V_(T) of the enhancement MOST is lowered or V_(T) of the depletion type is increased as is apparent from FIG. 3, the difference between V_(DH) and V_(DD) becomes large. Since the node N changes from V_(DH) to 0V in FIG. 15A, an excessive V_(DH) voltage is applied between the drain and source of each of M1 and M2, and the excessive voltage V_(DH) is applied even to the gate of each MOST lying in the sub inverter IV, so that the reliability of each MOST is impaired. In order to protect each MOST from the excessive drain-source voltage, each MOST having a gate to which a suitable dc voltage is applied may be inserted in series to an excessive voltage node. M12 and M22 shown in FIG. 26 are MOSTs inserted for the purpose referred to above. Since the node N still remains at V_(DH) or so where IN is 0V in the initial stage of activation at which CK2 is brought to V_(DD), an excessive voltage is applied to the input MOST M1 shown in FIG. 15A. Therefore, a MOST M12 of low V_(T) (0V) with V_(DH)/2 taken as a gate voltage is inserted in series to its corresponding input MOST M11. The voltage of a node k1 is brought to V_(DH)/2 until the node N is discharged to V_(DH)/2. Thus, the drain-to-source voltage of each of M11 and M12 is reduced to half like V_(DH)/2. Similarly, the excessive voltage applied to M2 of FIG. 15A is relaxed by M22 during the period in which the node N is being discharged to 0V. That is, since CK1 is off at V_(DH), a node k2 is brought to V_(DH)/2 and hence the drain-to-source voltages of Mil and M12 are respectively brought to V_(DH)/2. Similarly, the insertion of such MOSTs is effective even for circuits such as a sub inverter operated at V_(DH). Incidentally, in order to protect each MOST from the excessive gate voltage, the thickness of the gate of each MOST in which V_(DH) is brought to a gate voltage may be made thicker than that of the gate of each MOST in which V_(DD) is brought to a gate voltage. If FIG. 16 is taken for example, then a gate thickness of Mp may be made thicker than that of each MOST coupled to its drain (OUT). In the case of FIG. 15, the gate thicknesses of M21 and each MOST lying in the sub inverter may be thicker than others.

FIG. 27 is a schematic diagram of an LSI (CHIP) to which the above circuits are applied. The CHIP comprises an interface circuit (I/O) which swaps input/output signals with the outside thereof, a main circuit (CORE) lying thereinside, and a clock generator and a circuit (CKG & VC) for converting an external source voltage V_(DD). The CORE further comprises a circuit group A operated at large amplitude voltages of V_(DD) and V_(SS), and a circuit group B operated at small amplitude voltages of V_(DL) and V_(SH). The circuit group A comprises separate circuits, e.g., A1 and A2 small in load capacitance, thus originally small in power consumption. Thus, since those separate circuits are allowed to operate with large voltage amplitude in terms of power consumption, such a conventional CMOS circuit as shown in FIG. 29 is used as it is. On the other circuit, the circuit group B comprises separate circuits, e.g., B1 and B2 large in load capacitance, thus originally large in power consumption. Thus, since those separate circuits must be operated with small voltage amplitude in terms of power consumption, the circuits employed in the embodiments from FIG. 2 to FIG. 14 or the circuits from FIG. 15 to FIG. 26 can be used for any purpose. Incidentally, the CORE′ of FIG. 28A shows the circuit group B per se or its part. The circuit of FIG. 11 can be used to perform the transfer of signals from A1 lying in the circuit group A to B1 lying in the circuit group B. The circuit of FIG. 10 can be used to perform the transfer of signals from B2 to A2.

FIG. 28A is a schematic diagram of an LSI in which external power sources or power supplies are two (V_(DD) and V_(I/O)). The source voltage V_(I/O) considerably higher than V_(DD) is normally applied to an interface I/O. Power supplies of an internal main circuit (CORE) are three (V_(DD), V_(DH) and V_(SL)). As for V_(DH), V_(I/O) is used as it is or a source voltage stepped down from V_(I/O) by a step-down power circuit (circuit which uses a reference voltage Vref, a comparator CP and a pMOST M as for an output stage as shown in FIG. 28B) is used therefor. Since a load driving current is large in this type of step-down power circuit as well known, it is effective for such a circuit that large current flows through V_(DH). If V_(DH) does not require the large current, then V_(DD) is stepped up or raised by the known charge pump circuit using the capacitor and the stepped-up V_(DD) can also be used as the V_(DH) power supply. The negative voltage V_(SL) can be generated from V_(DD) or V_(I/O) by the charge pump circuit. Since V_(DD) can also be produced from V_(I/O), a single power supply operation of V_(I/O) is enabled in this case.

While the invention made above by the present inventors has been described specifically on the basis of the preferred embodiments, the present invention is not limited to the embodiments referred to above. It is needless to say that various changes can be made thereto within the scope not departing from the gist thereof.

INDUSTRIAL APPLICABILITY

The present invention can widely be used in various semiconductor devices each using a CMOS circuit. 

1-29. (canceled)
 30. A semiconductor device comprising: a first MOST having a gate terminal supplied by a first input signal and a source terminal connected to a first power line; a second MOST having a gate terminal supplied by the first input signal and a drain terminal connected to a drain terminal of the first MOST; a third MOST having a gate terminal supplied by a second input signal, a drain terminal connected to a source terminal of the second MOST, and a source terminal connected to a second power line; and a fourth MOST having a gate terminal connected to the drain terminal of the first MOST and the drain terminal of the second MOST, and a source terminal connected to a third power line, wherein the first power line has a first voltage, wherein the second power line has a second voltage, wherein the third power line has a third voltage, which is a voltage in between the first voltage and the second voltage, wherein the first MOST and the fourth MOST are p-channel MOS transistors, and the second MOST and the third MOST are n-channel MOS transistors, wherein a threshold voltage of the fourth MOST is positive or has a negative voltage with a lower absolute value than an absolute value of a threshold voltage of the first MOST, wherein the first MOST turns on, the second transistor turns off, and the gate terminal of the fourth MOST has the first voltage, independently of an input voltage of the second input signal, when the first input signal is low, wherein the first and the third MOSTs turn off, the second MOST turns on, and the gate terminal of the fourth MOST is in a floating state, when the first input signal is high and the second input signal is low, and wherein the first MOST turns off, the second and the third MOSTs turn on, and the gate terminal of the fourth MOST has the second voltage, when the first input signal is high and the second input signal is high.
 31. The semiconductor device according to claim 30, wherein the threshold voltage of the first MOST is equal to or higher than −0.3 volts, and the threshold voltage of the fourth MOST is between −0.3 volts and +0.3 volts.
 32. The semiconductor device according to claim 30, wherein the first MOST is enhancement type, and the fourth MOST is depression type.
 33. The semiconductor device according to claim 30, further comprising: a fifth MOST having a gate terminal which is connected to the drain terminal of the first MOST, the drain terminal of the second MOST, and the gate terminal of the fourth MOST, a drain terminal which is connected to the drain terminal of the fourth MOST and an output node, and a source terminal connected to a fourth power line, wherein the fourth power line has a fourth voltage, which is a voltage in between the second voltage and the third voltage, wherein the fifth MOST is an n-channel MOS transistor, wherein a threshold voltage of the fifth MOST is lower than a threshold voltage of the second and the third MOSTs, wherein the fourth MOST turns off, the fifth MOST turns on, and the output node has the fourth voltage, independently of an input voltage of the second input signal, when the first input signal is low, wherein the fourth MOST turns on, the fifth MOST turns off, and the output signal has the third voltage, when the first input signal is high and the second input signal is high, and wherein the gate terminals of the fourth and the fifth MOSTs are held at the first voltage, and the output voltage has the fourth voltage, when the first input signal transits from low to high and the second input signal is low.
 34. The semiconductor device according to claim 33, wherein the threshold voltage of the second and the third MOSTs is equal to or higher than 0.3 volts, and the threshold voltage of the fifth MOST is between −0.3 volts and +0.3 volts.
 35. The semiconductor device according to claim 33, wherein the second and the third MOSTs are enhancement type, and the fifth MOST is depression type. 